KMI18/4,115 NXP Semiconductors, KMI18/4,115 Datasheet - Page 5

• Manufacturer Part Number: KMI18/4,115
• Manufacturer: NXP Semiconductors

Specifications of KMI18/4,115

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Philips Semiconductors
Notes
1. LOW: open collector output transistor open (V
2. HIGH: open collector output transistor closed (V
3. Measured with harmonic magnetic field in ‘y’ with H
4. Higher magnetic fields could cause irreversible shifts of parameters.
5. Output pins are designed for electrostatic sensitivity with field strengths up to 2 kV according to Human Body
6. MR pins are designed for electrostatic sensitivity with field strengths up to 0.3 kV according to Human Body
7. Measured with harmonic magnetic field in ‘y’ with H
2000 Sep 05
t
d
Environmental conditions
Capacity of sensor shield
C
dfOUT
tdfOUT
s
Integrated rotational speed sensor
Model (HBM), MIL-STD-883, Method 3015.
Model (HBM), MIL-STD-883, Method 3015.
SYMBOL
output signal delay time of
HL-edge
jitter of HL-edge
external magnetic
influence
ESD protection of sensor
pins V
ESD protection of internal
pins B1, B2, B3 and B4
EMC: Compliance to
ISO 11452-5
interference for pulse:
ISO 7637; pulse 4
shield capacity
CC
PARAMETER
, OUT and GND
T
normalized to cycle of one
reference mark; note 3
note 4
compliance to
IEC 0801-2 (IV); note 5
compliance to
IEC 0801-2 (IV); note 6
(A, stripline, 300 V/m,
10 kHz to 400 MHz,
1500 mm); note 7
T = 25 C; note 7
B1 versus B2 of
MR bridge; f = 1 MHz;
U
amb
osc
OUT
OUT
= 200 mV
= ( 40 to +150) C
CONDITIONS
< 1 V).
y max
y max
> 4 V).
5
= 1 kA/m and f
= 1 kA/m and f
m
m
1.95
1.5
0
2
0.3
function A
37
= 10, 1000 and 8000 Hz.
= 50 Hz.
MIN.
2.3
43
TYP.
Objective specification
2.55
3.5
0.15
30
48
MAX.
KMI18/4
%
kA/m
kV
kV
pF
s
s
UNIT