K4H511638C-ZCB3 Samsung Semiconductor, K4H511638C-ZCB3 Datasheet - Page 5
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K4H511638C-ZCB3
Manufacturer Part Number
K4H511638C-ZCB3
Description
Manufacturer
Samsung Semiconductor
Type
DDR SDRAMr
Datasheet
1.K4H511638C-ZCB3.pdf
(24 pages)
Specifications of K4H511638C-ZCB3
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
FBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
185mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K4H511638C-ZCB3
Manufacturer:
SAMSUNG
Quantity:
13
DDR SDRAM 512Mb C-die (x4, x8, x16)
4.0 Ball Description
128M x 4
64M x 8
32M x 16
1
2
3
7
8
9
1
2
3
7
8
9
1
2
3
7
8
9
VDDQ
VDDQ
VSSQ
VSSQ
VSSQ
VDDQ
DQ15
VDD
VDD
DQ7
VSS
DQ0
VDD
VSS
VSS
DQ0
NC
NC
A
A
A
VDDQ
VDDQ
VSSQ
VDDQ
VSSQ
VSSQ
DQ14
DQ13
DQ6
DQ1
DQ3
DQ0
DQ2
DQ1
NC
NC
NC
NC
B
B
B
DM is internally loaded to match DQ and DQS identically.
Organization
(Bottom
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
DQ12
DQ11
128Mx4
32Mx16
DQ5
DQ2
DQ4
DQ3
64Mx8
NC
NC
NC
NC
NC
NC
C
C
C
Row & Column address configuration
VDDQ
VDDQ
VSSQ
VDDQ
VSSQ
VSSQ
DQ10
DQ4
DQ3
DQ2
DQ1
DQ9
DQ6
DQ5
NC
NC
NC
NC
D
D
View)
D
VDDQ
VSSQ
VDDQ
VSSQ
UDQS
VDDQ
VSSQ
LDQS
DQS
DQS
DQ8
DQ7
NC
NC
NC
NC
NC
NC
E
E
E
Row Address
A0~A12
A0~A12
A0~A12
VREF
VREF
VREF
VDD
UDM
VDD
VSS
LDM
VDD
VSS
VSS
DM
DM
NC
NC
NC
NC
NC
F
F
F
CAS
CAS
CAS
WE
WE
CK
CK
WE
CK
CK
CK
CK
G
G
G
CKE
RAS
CKE
RAS
CKE
RAS
A12
A12
A12
CS
CS
CS
H
H
H
Column Address
A0-A9, A11, A12
A0-A9, A11
A0-A9
BA1
BA0
BA1
BA0
A11
BA1
BA0
A11
A11
A9
A9
A9
J
J
J
A10/AP
A10/AP
A10/AP
A8
A7
A0
A8
A7
A0
A8
A7
A0
K
K
K
Rev. 1.1 June. 2005
DDR SDRAM
A6
A5
A2
A1
A6
A5
A2
A1
A6
A5
A2
A1
L
L
L
VDD
VSS
VDD
VSS
VDD
VSS
A4
A3
A4
A3
A4
A3
M
M
M