K4H511638C-ZCB3 Samsung Semiconductor, K4H511638C-ZCB3 Datasheet - Page 9
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K4H511638C-ZCB3
Manufacturer Part Number
K4H511638C-ZCB3
Description
Manufacturer
Samsung Semiconductor
Type
DDR SDRAMr
Datasheet
1.K4H511638C-ZCB3.pdf
(24 pages)
Specifications of K4H511638C-ZCB3
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
FBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
185mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K4H511638C-ZCB3
Manufacturer:
SAMSUNG
Quantity:
13
Note :
1. OP Code : Operand Code. A
2. EMRS/MRS can be issued only at all banks precharge state.
3. Auto refresh functions are same as the CBR refresh of DRAM.
4. BA
5. If A
6. During burst write with auto precharge, new read/write command can not be issued.
7. Burst stop command is valid at every burst length.
8. DM(x4/8) sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
8.0 Command Truth Table
DDR SDRAM 512Mb C-die (x4, x8, x16)
Register
Register
Refresh
Bank Active & Row Addr.
Read &
Column Address
Write &
Column Address
Burst Stop
Precharge
Active Power Down
Precharge Power Down Mode
DM(UDM/LDM for x16 only)
No operation (NOP) : Not defined
A new command can be issued 2 clock cycles after EMRS or MRS.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
If both BA
If BA
If BA
If both BA
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
UDM/LDM(x16 only) sampled at the rising and falling edges of the UDQS/LDQS and Data-in are masked at the both edges
(Write UDM/LDM latency is 0).
0
10
~ BA
0
0
/AP is "High" at row precharge, BA
is "High" and BA
is "Low" and BA
1
0
0
: Bank select addresses.
and BA
and BA
COMMAND
1
1
Extended MRS
Mode Register Set
Auto Refresh
Self
Refresh
Auto Precharge Disable
Auto Precharge Enable
Auto Precharge Disable
Auto Precharge Enable
Bank Selection
All Banks
are "Low" at read, write, row active and precharge, bank A is selected.
are "High" at read, write, row active and precharge, bank D is selected.
1
1
is "High" at read, write, row active and precharge, bank C is selected.
is "Low" at read, write, row active and precharge, bank B is selected.
0
~ A
13
& BA
Entry
Entry
Entry
Exit
Exit
Exit
0
and BA
0
~ BA
1
CKEn-1 CKEn
1
: Program keys. (@EMRS/MRS)
are ignored and all banks are selected.
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
RP
after the end of burst.
X
X
H
H
X
X
X
X
X
H
H
X
L
L
L
CS
H
H
H
H
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
RAS
H
X
H
H
H
X
V
X
X
H
X
V
X
H
L
L
L
L
L
X
CAS
H
X
H
H
H
X
V
X
X
H
X
V
X
H
L
L
L
L
L
(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
WE
H
H
X
H
H
X
V
X
X
H
X
V
X
H
L
L
L
L
L
BA0,1 A10/AP
V
V
V
V
X
Rev. 1.1 June. 2005
OP CODE
OP CODE
H
H
H
L
L
L
Row Address
X
X
X
X
X
X
X
DDR SDRAM
A11 ~ A12
A0 ~ A9,
Address
Address
Column
Column
X
Note
1, 2
1, 2
4, 6
3
3
3
4
4
4
7
5
8
9
9
3