MT48H16M16LFBF-8:G Micron Technology Inc, MT48H16M16LFBF-8:G Datasheet - Page 53

• Manufacturer Part Number: MT48H16M16LFBF-8:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-8:G

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 9/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 85mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 23: Alternating Bank Read Accesses
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Command
BA0, BA1
Address
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank 0
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
t RCD - bank 0
t RAS - bank 0
t RC - bank 0
t RRD
t CK
Note:
T1
NOP
1. For this example, BL = 4 and CL = 2.
Enable auto precharge
t CMS
t CL
Column m
Bank 0
T2
READ
t CMH
t CH
CL - bank 0
T3
NOP
t LZ
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t AC
53
ACTIVE
Bank 3
T4
Row
Row
D
OUT
t OH
t AC
t RCD - bank 3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
D
NOP
OUT
t OH
t AC
Enable auto precharge
Column b
Bank 3
T6
READ
D
OUT
t OH
t AC
1
t RP - bank 0
CL - bank 3
©2008 Micron Technology, Inc. All rights reserved.
T7
NOP
D
READ Operation
Don’t Care
OUT
t OH
t AC
Bank 0
Row
Row
T8
ACTIVE
D
OUT
t OH
t RCD - bank 0
Undefined
t AC