MT48H16M16LFBF-8:G Micron Technology Inc, MT48H16M16LFBF-8:G Datasheet - Page 54

• Manufacturer Part Number: MT48H16M16LFBF-8:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-8:G

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 9/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 85mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 24: READ Continuous Page Burst
Command
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Row
Row
Bank
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t CL
T1
Note:
NOP
t CH
t CMS
1. For this example, CL = 2.
t CK
Column m
Bank
T2
READ
t CMH
CAS latency
T3
NOP
t LZ
t AC
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
T4
NOP
D
OUT
t OH
t AC
54
All locations within same row
T5
Full-page burst does not self-terminate.
D
NOP
Can use BURST TERMINATE command.
OUT
t OH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t AC
Full page completed
T6
NOP
D
OUT
t OH
t AC
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Tn + 1
NOP
D
OUT
t OH
t AC
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BURST TERM
Tn + 2
READ Operation
D
OUT
t OH
t AC
Tn + 3
NOP
D
OUT
t OH
t HZ
Don’t Care
Undefined
Tn + 4
NOP