BCR135WE6327XT Infineon Technologies, BCR135WE6327XT Datasheet - Page 3

• Manufacturer Part Number: BCR135WE6327XT
• Description: Trans Digital BJT NPN 50V 100mA 3-Pin SOT-323 T/R
• Manufacturer: Infineon Technologies
• Type: NPNr

Specifications of BCR135WE6327XT

• Package: 3SOT-323
• Configuration: Single
• Minimum Dc Current Gain: 70@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.3@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
Collector-emitter saturation voltage
I
Input off voltage
I
Input on voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
EB
CB
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 10 mA, I
= 100 µA, V
= 2 mA, V
= 10 mA, V
= 6 V, I
= 40 V, I
= 10 V, f = 1 MHz
C
E
CE
CE
B
E
B
= 0
CE
= 0
CE
= 0.5 mA
= 0
= 0
1)
= 5 V
= 0.3 V
= 5 V, f = 100 MHz
= 5 V
A
= 25°C, unless otherwise specified
1)
3
f
C
Symbol
V
V
I
I
h
V
V
V
R
R
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
cb
1
1
/R
2
min.
0.19
0.5
0.5
50
50
70
7
-
-
-
-
-
Values
0.21
typ.
150
10
3
-
-
-
-
-
-
-
-
max.
0.24
100
167
0.3
1.4
BCR135...
13
1
2007-07-23
-
-
-
-
-
MHz
pF
Unit
V
nA
µA
-
V
k
-