BCR135WE6327XT Infineon Technologies, BCR135WE6327XT Datasheet - Page 4
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BCR135WE6327XT
Manufacturer Part Number
BCR135WE6327XT
Description
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-323 T/R
Manufacturer
Infineon Technologies
Type
NPNr
Datasheet
1.BCR135WE6327XT.pdf
(12 pages)
Specifications of BCR135WE6327XT
Package
3SOT-323
Configuration
Single
Minimum Dc Current Gain
70@5mA@5V
Peak Dc Collector Current
100 mA
Maximum Collector Emitter Saturation Voltage
0.3@0.5mA@10mA V
Maximum Collector Emitter Voltage
50 V
Maximum Processing Temperature
260 °C
DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
10
= 5V (common emitter configuration)
= 0.3V (common emitter configuration)
V
-1
3
2
1
0
2
1
0
10
10
-4
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-4
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
FE
i (on)
-3
=
10
= ( I
( I
-3
C
)
C
10
)
-2
10
-2
A
I
I
C
C
A
10
10
-1
-1
4
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
0.35
0.25
0.15
0.05
10
10
= 5V (common emitter configuration)
0.5
0.4
0.3
0.2
0.1
V
V
-1
0
1
0
10
10
= ( I
-3
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
), I
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
/I
-4
B
i(off)
= 20
10
10
=
-2
-3
( I
C
)
BCR135...
2007-07-23
10
A
-2
I
I
C
C
A
10
10
-1
-1