BCW32T/R NXP Semiconductors, BCW32T/R Datasheet - Page 2

• Manufacturer Part Number: BCW32T/R
• Description: Trans GP BJT NPN 32V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BCW32T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 200@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.75(Typ)@0.5mA@10mA|0.85(Typ)@2.5mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 32 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
FEATURES
• Low current (100 mA)
• Low voltage (32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistors in a plastic SOT23 package.
PNP complements: BCW29 and BCW30.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Feb 06
BCW31
BCW32
BCW33
BCW31
BCW32
BCW33
V
V
V
I
I
I
P
T
T
T
C
CM
BM
NUMBER
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
PARAMETER
−
MARKING CODE
plastic surface mounted package; 3 leads
D1*
D2*
D3*
open emitter
open base; I
open collector
T
(1)
amb
≤ 25 °C
DESCRIPTION
2
CONDITIONS
PACKAGE
PINNING
handbook, halfpage
C
= 2 mA
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
BCW31; BCW32;
2
MAM255
32
32
5
100
200
200
250
+150
150
+150
Product data sheet
MAX.
1
VERSION
SOT23
BCW33
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT