BCW32T/R NXP Semiconductors, BCW32T/R Datasheet - Page 4

• Manufacturer Part Number: BCW32T/R
• Description: Trans GP BJT NPN 32V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BCW32T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 200@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.75(Typ)@0.5mA@10mA|0.85(Typ)@2.5mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 32 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
PACKAGE OUTLINE
2004 Feb 06
NPN general purpose transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
4
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
BCW31; BCW32; BCW33
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
X
Product data sheet
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23