BFQ149T/R NXP Semiconductors, BFQ149T/R Datasheet - Page 3

• Manufacturer Part Number: BFQ149T/R
• Description: Trans GP BJT PNP 15V 0.1A 4-Pin(3+Tab) SOT-89 T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BFQ149T/R

• Package: 4SOT-89
• Supplier Package: SOT-89
• Pin Count: 4
• Minimum Dc Current Gain: 20@70mA@10V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 3 V

NXP Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Note
1. G
R
I
h
f
C
C
C
G
F
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
PNP 5 GHz wideband transistor
th j-s
c
e
re
UM
G
s
UM
UM
is the temperature at the soldering point of the collector tab.
is the maximum unilateral power gain, assuming S
=
10
thermal resistance from junction to
soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
log
------------------------------------------------------------- - dB.
1
–
S
PARAMETER
PARAMETER
11
S
2
21
1
2
–
S
22
2
Rev. 03 - 28 September 2007
I
I
I
f = 500 MHz; T
I
I
I
I
f = 500 MHz; T
I
R
T
E
C
C
E
C
C
C
C
amb
s
= 0; V
= 0; V
= 70 mA; V
= 70 mA; V
= 0; V
= 0; V
= 50 mA; V
= 50 mA; V
up to T
= 60
= 25 C
12
CB
CB
EB
CE
is zero and
s
CONDITIONS
CONDITIONS
= 10 V;
= 10 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
f = 500 MHz;
= 135 C (note 1)
amb
amb
CE
CE
CE
CE
= 10 V
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
THERMAL RESISTANCE
20
4
MIN. TYP. MAX.
50
5
2
4
1.7
12
3.75
Product specification
40 K/W
BFQ149
100
3 of 7
nA
GHz
pF
pF
pF
dB
dB
UNIT