BFQ149T/R NXP Semiconductors, BFQ149T/R Datasheet - Page 4
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BFQ149T/R
Manufacturer Part Number
BFQ149T/R
Description
Trans GP BJT PNP 15V 0.1A 4-Pin(3+Tab) SOT-89 T/R
Manufacturer
NXP Semiconductors
Type
PNPr
Datasheet
1.BFQ149TR.pdf
(7 pages)
Specifications of BFQ149T/R
Package
4SOT-89
Supplier Package
SOT-89
Pin Count
4
Minimum Dc Current Gain
20@70mA@10V
Maximum Operating Frequency
5000(Typ) MHz
Maximum Dc Collector Current
0.1 A
Maximum Collector Base Voltage
20 V
Maximum Collector Emitter Voltage
15 V
Maximum Emitter Base Voltage
3 V
NXP Semiconductors
handbook, halfpage
handbook, halfpage
PNP 5 GHz wideband transistor
I
Fig.2
V
Fig.4
E
h
(pF)
CE
C c
= 0; f = 1 MHz; T
FE
= 10 V; T
80
60
40
20
0
4
3
2
1
0
0
0
Collector capacitance as a function of
collector-base voltage.
DC current gain as a function of collector
current.
j
= 25 C.
j
= 25 C.
100
10
I
V CB (V)
C
(mA)
MBB345
MEA328
Rev. 03 - 28 September 2007
200
20
handbook, halfpage
handbook, halfpage
(GHz)
Fig.3
G UM
I
Fig.5
V
(dB)
c
CE
T f
= 50 mA; V
= 10 V; f = 500 MHz; T
40
30
20
10
4
0
8
6
2
0
10
0
Transition frequency as a function of
collector current.
Maximum unilateral power gain as a
function of frequency.
CE
= 10 V; T
10
2
amb
amb
= 25 C.
= 25 C.
50
10
3
I
Product specification
C
(mA)
f (MHz)
BFQ149
MEA329
MBB347
100
10
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