BFQ149T/R NXP Semiconductors, BFQ149T/R Datasheet - Page 4

• Manufacturer Part Number: BFQ149T/R
• Description: Trans GP BJT PNP 15V 0.1A 4-Pin(3+Tab) SOT-89 T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BFQ149T/R

• Package: 4SOT-89
• Supplier Package: SOT-89
• Pin Count: 4
• Minimum Dc Current Gain: 20@70mA@10V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 3 V

NXP Semiconductors
handbook, halfpage
handbook, halfpage
PNP 5 GHz wideband transistor
I
Fig.2
V
Fig.4
E
h
(pF)
CE
C c
= 0; f = 1 MHz; T
FE
= 10 V; T
80
60
40
20
0
4
3
2
1
0
0
0
Collector capacitance as a function of
collector-base voltage.
DC current gain as a function of collector
current.
j
= 25 C.
j
= 25 C.
100
10
I
V CB (V)
C
(mA)
MBB345
MEA328
Rev. 03 - 28 September 2007
200
20
handbook, halfpage
handbook, halfpage
(GHz)
Fig.3
G UM
I
Fig.5
V
(dB)
c
CE
T f
= 50 mA; V
= 10 V; f = 500 MHz; T
40
30
20
10
4
0
8
6
2
0
10
0
Transition frequency as a function of
collector current.
Maximum unilateral power gain as a
function of frequency.
CE
= 10 V; T
10
2
amb
amb
= 25 C.
= 25 C.
50
10
3
I
Product specification
C
(mA)
f (MHz)
BFQ149
MEA329
MBB347
100
10
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