SI3452D-B01-GM Silicon Laboratories Inc, SI3452D-B01-GM Datasheet - Page 4

IC POE CONTROLLER MIDSPAN 40QFN

SI3452D-B01-GM

Manufacturer Part Number
SI3452D-B01-GM
Description
IC POE CONTROLLER MIDSPAN 40QFN
Manufacturer
Silicon Laboratories Inc
Datasheet

Specifications of SI3452D-B01-GM

Package / Case
40-QFN
Controller Type
Power over Ethernet Controller (POE)
Interface
I²C
Voltage - Supply
3 V ~ 3.6 V
Current - Supply
14mA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Maximum Power Dissipation
1.2 W
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Product
Ethernet Controllers
Standard Supported
IEEE 802.3at, IEEE 802.3af
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Supply Current (max)
14 mA
Maximum Operating Temperature
+ 85 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
336-1835-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3452D-B01-GM
Manufacturer:
Silicon Labs
Quantity:
135
Si3452
1. Electrical Specifications
Unless noted otherwise, specifications apply over the operating temperature range with VDD = +3.3 V and
VEE = –48 V relative to GND.
VDD pins should be electrically shorted. AGND pins, DGND, GND12, and GND34 should be electrically shorted
(“GND”). VEE, VEE1, VEE2, VEE3, and VEE4 should be electrically shorted (“VEE”).
VPort for any port is measured from GND to the respective VOUTn.
Table 1. Absolute Maximum Ratings
4
Type
Supply Voltages
Voltage on Digital Pins
Voltage on Analog Pins
DETn Peak Currents During Surge Events
Maximum Continuous Power Dissipation
Maximum Junction Temperature
Ambient Storage Temperature
Lead Temperature (Soldering, 10 seconds Maximum)
Notes:
1. Functional operation should be restricted to those conditions specified in Table 2. Functional operation or specification
2. See IEEE Std 802.3-2005, clause 33.4, for a description of surge events.
3. If all ports are on with 600 mA load, the power dissipation is <1.2 W. At 85 °C ambient with the expected 32 °C/W
compliance is not implied at these conditions. Stresses beyond those listed in absolute maximum ratings may cause
permanent damage to the device.
thermal impedance, the junction temperature would be 123.4 °C, which is within the 125 °C maximum rating.
VREF, AIN, AOUT, RBIAS, OSC
Any GND to any other GND
Any VEE to any other VEE
SDA, SCL, ADn, RST, INT
VDD1 to VDD2
VOUTn, DETn
3
VDD to GND
VEE to GND
Description
1
2
Rev. 1.2
(GND – 0.3) to (VDD + 0.3)
(GND – 0.3) to (VDD + 0.3)
(VEE – 0.3) to (GND + 0.3)
–0.3 to +3.6
–0.3 to +0.3
–0.3 to +0.3
–0.3 to +0.3
–62 to +0.3
–55 to 150
Rating
125
260
1.2
±5
Unit
°C
°C
°C
W
V
V
V
V
V
V
V
V
A

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