S-8233AKFT-TB-G Seiko Instruments, S-8233AKFT-TB-G Datasheet - Page 6
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S-8233AKFT-TB-G
Manufacturer Part Number
S-8233AKFT-TB-G
Description
Battery Management Lithium-Ion battery protection (3 cell)
Manufacturer
Seiko Instruments
Datasheet
1.S-8233ACFE-TB-G.pdf
(26 pages)
Specifications of S-8233AKFT-TB-G
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S-8233AKFT-TB-G
Manufacturer:
SEIKO
Quantity:
512
6
Detection voltage
Overcharge detection voltage 1
Overcharge release voltage 1
Overdischarge detection voltage 1
Overdischarge release voltage 1
Overcharge detection voltage 2
Overcharge release voltage 2
Overdischarge detection voltage 2
Overdischarge release voltage 2
Overcharge detection voltage 3
Overcharge release voltage 3
Overdischarge detection voltage 3
Overdischarge release voltage 3
Overcurrent detection voltage 1
Overcurrent detection voltage 2
Overcurrent detection voltage 3
Voltage temperature factor 1
Voltage temperature factor 2
Delay time
Overcharge detection delay time 1
Overcharge detection delay time 2
Overcharge detection delay time 3
Overdischarge detection delay time 1
Overdischarge detection delay time 2
Overdischarge detection delay time 3
Overcurrent detection delay time 1
Overcurrent detection delay time 2
Overcurrent detection delay time 3
Operating voltage
Operating voltage between VCC and VSS
Current consumption
Current consumption
(during normal operation)
Current consumption for cell 2
Current consumption for cell 3
Current consumption at power down
Internal resistance
Resistance between
VCC and VMP
Resistance between
VSS and VMP
Input voltage
CTL"H" Input voltage
CTL"L" Input voltage
BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK
S-8233A Series
Electrical Characteristics
Item
*2
*3
*1
*5
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
T
T
t
t
t
t
t
t
t
t
t
V
I
I
I
I
R
R
V
V
CU1
CU2
CU3
DD1
DD2
DD3
IOV1
IOV2
IOV3
OPE
CELL2
CELL3
PDN
Symbol
COE1
COE2
CU1
CD1
DD1
DU1
CU2
CD2
DD2
DU2
CU3
CD3
DD3
DU3
IOV1
IOV2
IOV3
DSOP
VCM
VSM
CTL(H)
CTL(L)
FET gate capacitor = 2000 pF
0.15 to 0.50V Adjustment
4.10 to 4.35 Adjustment
3.85 to 4.35 Adjustment
2.00 to 2.70 Adjustment
2.00 to 3.70 Adjustment
4.10 to 4.35 Adjustment
3.85 to 4.35 Adjustment
2.00 to 2.70 Adjustment
2.00 to 3.70 Adjustment
4.10 to 4.35 Adjustment
3.85 to 4.35 Adjustment
2.00 to 2.70 Adjustment
2.00 to 3.70 Adjustment
V1 = V2 = V3 = 3.5 V
V1 = V2 = V3 = 3.5 V
V1 = V2 = V3 = 3.5 V
V1 = V2 = V3 = 1.5 V
V1 = V2 = V3 = 3.5 V
V1 = V2 = V3 = 1.5 V
V1 = V2 = V3 = 3.5 V
V1 = V2 = V3 = 1.5 V
Seiko Instruments Inc.
Ta = -20 to 70°C
Ta = -20 to 70°C
C
C
C
C
V
V
C
C
C
CC
SS
CCT
CCT
CCT
COVT
CDT
CDT
CDT
Condition
Table 4 (1 / 2)
Reference
Reference
= 0.47 μF
= 0.47 μF
= 0.47 μF
= 0.1 μF
= 0.1 μF
= 0.1 μF
= 0.1 μF
−
−
−
−
*4
*4
*6
*6
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IOV1
CU1
CD1
DD1
DU1
CU2
CD2
DD2
DU2
CU3
CD3
DD3
DU3
−300
−300
CC
0.54
−1.0
−0.5
0.40
0.20
0.40
0.20
Min.
100
1.0
0.5
0.5
0.5
2.0
20
20
20
10
−0.05
−0.10
−0.08
−0.10
−0.05
−0.10
−0.08
−0.10
−0.05
−0.10
−0.08
−0.10
2
−
−
−
x0.8
x 0.9
(Ta = 25°C unless otherwise specified)
V
V
V
V
V
V
V
V
V
V
V
V
V
0.90
0.50
0.90
0.50
Typ.
300
0.6
2.0
1.0
1.0
1.0
40
40
40
20
20
IOV1
CU1
CD1
DD1
DU1
CU2
CD2
DD2
DU2
CU3
CD3
DD3
DU3
0
0
4
−
0
0
−
−
−
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IOV1
CU1
CD1
DD1
DU1
CU2
CD2
DD2
DU2
CU3
CD3
DD3
DU3
CC
Max.
0.66
1.40
0.80
1.40
0.80
550
300
300
3.0
1.0
0.5
1.5
1.5
1.5
0.1
60
60
60
30
24
50
+0.05
+0.10
+0.08
+0.10
+0.05
+0.10
+0.08
+0.10
+0.05
+0.10
+0.08
+0.10
8
−
x0.2
x 1.1
mV/°C
mV/°C
Unit
MΩ
MΩ
MΩ
MΩ
ms
ms
ms
ms
ms
μA
nA
nA
μA
μs
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
s
s
s
Condition
Rev.6.0
Test
10
11
10
11
12
12
12
1
1
1
1
2
2
2
2
3
3
3
3
4
4
4
−
−
9
9
−
5
5
5
5
6
6
6
6
−
−
Circuit
Test
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
−
−
6
6
6
6
6
6
7
7
7
−
3
3
3
3
3
3
3
3
−
−
_00