NTE123AP NTE Electronics, Inc., NTE123AP Datasheet - Page 2

• Manufacturer Part Number: NTE123AP
• Description: Transistor; NPN; 60 V (Max.); 40 V (Max.); 6 V (Max.); 600 mA (Max.); 20
• Manufacturer: NTE Electronics, Inc.
• Type: Audio Amplifier, Switchr

Specifications of NTE123AP

• Complement To: NTE159
• Current, Collector: 600 mA
• Current, Collector Cutoff: 0.1 μA
• Current, Continuous Collector: 600 mA
• Current, Gain: 40
• Device Dissipation: 350 mW
• Frequency: 250 MHz
• Gain, Dc Current, Minimum: 20
• Material Type: Silicon
• Package Type: TO-92
• Polarity: NPN
• Power Dissipation: 625 mW
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Temperature Range, Junction, Operating: -55 to +150 °C
• Transistor Polarity: PNP
• Voltage, Breakdown, Collector To Base: 60 V
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Breakdown, Emitter To Base: 6 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.75 V
• Voltage, Emitter To Base: 6 V
• Voltage, Saturation, Collector To Emitter: 0.75 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
ON Characteristics (Note 1) (Cont’d)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Small−Signal Characteristics
Current Gain−Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
Symbol
V
V
CE(sat)
BE(sat)
C
C
h
h
h
h
f
t
t
t
t
oe
T
cb
eb
ie
re
fe
d
s
r
f
A
= +25°C unless otherwise specified)
I
I
I
I
I
V
V
I
I
I
I
V
I
I
V
I
I
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CC
CC
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 20mA, V
= 1mA, V
= 1mA, V
= 1mA, V
= 1mA, V
= 150mA, I
= I
150mA I
= 5V, I
= 0.5V, I
= 30V, V
= 30V, I
I
B2
= 15mA
Test Conditions
15mA
E
CE
CE
CE
CE
C
= 0, f = 100kHz
C
CE
EB(off)
B
B
B
B
B1
= 150mA,
= 0, f = 100kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 15mA
= 50mA
= 15mA
= 50mA
(
= 10V, f = 100MHz
= 15mA
)
15mA
= 2V,
0.75
Min
250
1.0
0.1
1.0
40
−
−
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.75
0.95
500
225
0.4
1.2
6.5
8.0
30
15
30
15
20
30
−
µmhos
x 10
MHz
Unit
kΩ
pF
pF
ns
ns
ns
ns
V
V
V
V
−6