SKHI 10/12R Sindopower / Semikron, SKHI 10/12R Datasheet

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SKHI 10/12R

Manufacturer Part Number
SKHI 10/12R
Description
High Power IGBT Driver PCB
Manufacturer
Sindopower / Semikron
Datasheet

Specifications of SKHI 10/12R

Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
SKHI 10/12 (R) ...
High Power IGBT Driver
SKHI 10/12 (R)
Features
Typical Applications
1)
2)
3)
4)
1
SEMIDRIVER
TM
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Absolute Maximum Ratings
Symbol
Characteristics
Symbol
18-08-2006 MHW
Conditions
Conditions
min.
Values
typ.
© by SEMIKRON
max.
Units
Units

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SKHI 10/12R Summary of contents

Page 1

SKHI 10/12 (R) ... TM SEMIDRIVER High Power IGBT Driver SKHI 10/12 (R) Features Typical Applications Absolute Maximum Ratings Symbol Conditions Characteristics Symbol Conditions This technical information specifies semiconductor devices but promises no characteristics. No ...

Page 2

Block diagram SKHI10 1 INPUT Vin LEVEL 2 SELECTOR 15V 5V J1 RESET ERROR Vs +15V Vs 8,9 0V 10, Fig.1 The numbers refer to the description on page 4, section B. Input connector ...

Page 3

... SKHI 10/17 High Power Single IGBT Driver General The intelligent single IGBT driver, SKHI10 respectively SKHI 10/ standard driver for all power IGBTs on the market. The high power output capability was designed to switch high current modules or several paralleled IGBTs even for high frequency applications. The output buffer has been improved to make it possible to switch up to 400A IGBT modules at frequencies up to 20kHz ...

Page 4

... SEMIKRON 18-08-2006 V IT- 3. Error memory and reset signal The ERROR memory is triggered only by following events: • short circuit of IGBTs • case of short circuit, the V signal (fault signal) through the impulse transformer to a FLIP-FLOP on the primary side giving the information to an open-collector transistor (pin 3), which may be connected to the external control circuit as ERROR message in HIGH logic (or LOW short-circuited) ...

Page 5

Power supply (Vs) monitor The supply voltage V is monitored falls below 13V S an ERROR signal is generated and the turn-on pulses for the IGB’s gate are blocked. 5. Pulse transformer It transmits the turn-on and ...

Page 6

... IGBT per SKHI10 driver. The final optimized value can be found only by measuring. 330 18 0 330 Paralleling IGBTs 330 18 0 The parallel connection is recommended only by using IGBTs with homogeneous structure (IGHT), that have a positive temperature coefficient resulting in a perfect function of R CEstat CE INPUT CONNECTOR OUTPUT CONNECTOR 2 CCE l < ...

Page 7

... Fig. 9 Preferred circuit for paralleled IGBT’s current sharing without any external auxiliary element. After all some care must be considered to reach an optimized circuit and to obtain the total performance of the IGBT (Fig. 9). The IGBTs must have independent values of R and auxiliary emitter resistor R ...

Page 8

... For transportation the input terminals must be short circuited using, for example, conductive rubber. Places of work must be grounded. The same foam requirements apply to the IGBTs. 100ohm 2. The connecting leads between the driver and the power module must be as short as possible, and should be twisted ...

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