SKHI 10/12R Sindopower / Semikron, SKHI 10/12R Datasheet - Page 6

• Manufacturer Part Number: SKHI 10/12R
• Description: High Power IGBT Driver PCB
• Manufacturer: Sindopower / Semikron

Specifications of SKHI 10/12R

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Fig.7a
C. Operating Procedure
1. One IGBT connection
To realize the correct switching and short-circuit
monitoring of one IGBT some additional external
components must be used (Fig.8).
The driver is delivered with four R
value can be reduced to use the driver with bigger
modules or higher frequencies/lower voltages, by putting
additional resistors in parallel to the existing ones.
The outputs G
driver with more than one IGBT (paralleling). In that case
we need both signals ON/OFF separately to connect
additional external resistors R
If only one IGBT is to be used, we suggest to connect
both points together through J2 (see Fig. 1 and 2). This
can be done by soldering the two small pads together,
which saves one external connection.
Typical component values: *)
Table 2a 1200V IGBT@ DC-link< 700V
µsec
t min
© by SEMIKRON
SKM 75GAL123D
SKM 100GAL(R)123D
SKM 150GAL(R)123D
SKM 200GA(L/R)123D
SKM 300GA(L/R)123D
SKM 400GA123D
SKM 500GA123D
100
0.1
10
1
SK-IGBT-Module
0
t
min
as function of R
20
on
and G
18-08-2006
40
off
R
8,2
6,8
5,6
22
15
12
10
Gon
were previewed to connect the
CE
gon
R
and C
8,2
6,8
5,6
22
15
12
10
Goff
60
and R
g
resistors (43 ). This
CE
C
330
330
330
330
330
330
330
pF
goff
CE
80
for each IGBT.
RCE
R
kW
18
18
18
18
18
18
18
CE
100
I
Rgoff
1nF
470pF
330pF
220pF
100pF
CCE
k
0
0
0
0
0
0
0
V
Fig.7b V
Fig. 8 Preferred standard circuit
Table 2b 1700V IGBT@ DC-link< 1000V
*) Only starting values, for final optimization.
The adjustment of R
should be done observing the overvoltages at the module
in case of short circuit. When having a low inductive
DC-link the module can be switched off faster.
The values shown should be considered as standard
values for a mechanical/electrical assembly, with
acceptable stray inductance level, using only one
IGBT per SKHI10 driver. The final optimized value can
be found only by measuring.
2. Paralleling IGBTs
The parallel connection is recommended only by using
IGBTs with homogeneous structure (IGHT), that have a
positive temperature coefficient resulting in a perfect
SKM 200GAL173D
SKM 300GA173D
SKM 400GA173
STAT
volts
control GND
CONTROL BOARD
SK-IGBT-Module
10
+15V
1
0
CEstat
2K7
as function of R
Driver Electronic – PCB Drivers
20
l < 50cm
INPUT CONNECTOR
goffSC
10,11
R
8,2
6,8
5,6
Gon
2
4
3
40
(factory adjusted R
Rgoff-SC
Rgon
Rgoff
IRgoff
SKHI10
R
CCE
8,2
6,8
5,6
CE
Goff
60
C
470
470
470
OUTPUT CONNECTOR
RCE
pF
J2
CE
as short as
5
3
1
possible
80
R
kW
goffSC
36
36
36
CE
RCE
= 22
IRg
100 k
0
0
0
off
6
)