SKHI 10/12R Sindopower / Semikron, SKHI 10/12R Datasheet - Page 5

• Manufacturer Part Number: SKHI 10/12R
• Description: High Power IGBT Driver PCB
• Manufacturer: Sindopower / Semikron

Specifications of SKHI 10/12R

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

4. Power supply (Vs) monitor
The supply voltage V
an ERROR signal is generated and the turn-on pulses for
the IGB’s gate are blocked.
5. Pulse transformer
It transmits the turn-on and turn-off signals to the IGBT. In
the reverse direction the ERROR signal from the V
monitoring is transmitted via the same transformer. The
isolation is 4 kV.
6. DC/DC converter
In the primary side of the converter, a half-bridge inverter
transfers the necessary energy from V
of a ferrite transformer. In the secondary side, a full bridge
and filters convert the high frequency signal coming from
the primary to DC levels (+15V/- 8V) that are stabilised by
a voltage regulator circuit.
7. Output buffer
The output buffer is supplied by the +15V/- 8V from the
DC/DC converter. If the operation proceeds normally (no
fault), the on- and off-signal is transmitted to the gate of
an IGBT through R
MOSFET pair that is able to source/sink up to 8A peak
current to/from the gate improving the turn-on/off time of
the IGBT. Additionally, we can select I
either to discharge the gate capacitance with a voltage
source (standard) or with a current source, specially
design for the 1700V IGBT series (it speeds up the
turn-off time of the IGBT). The present factory setting is
voltage source (I
I
Fig.6 V
8. Soft turn-off
In case of short-circuit, a further circuit (SOFT
TURN-OFF) increases the resistance in series with R
and turns-off the IGBT at a lower speed. This produces a
smaller voltage spike (due LSTRAY x di/dt) above the DC
link by reducing the di/dt value. Because in short-circuit
conditions the Homogeneous IGBT’s peak current
increases up to 8 times the nominal current (up to 10
times with Epitaxial IGBT structures), and some stray
inductance is ever present in power circuits, it must fall to
zero in a longer time than at normal operation. This “soft
Rgoff
5
, R
Driver Electronic – PCB Drivers
goff
CEref
Volt
18
14
10
turn-on
6
2
must be 0 .
IGBT
t
min1
waveform with parameters R
1µ
V
t
CE
min2
Rgoff
gon
3µ
S
= 0 ). Using the current source
and R
is monitored. If it falls below 13V
5µ
goff
. The output stage has a
RCE=100K
CCE=1nF
RCE=10K
CCE=10pF
RCE=18K
CCE=330pF
V
CEref
7µ
= f(RCE,CCE)
S
Rgoff
to the secondary
3
2
1
CE
9µ
V
V
V
CEstat2
CEstat1
CEsat
, C
(see Fig. 2)
sec
CE
goff
CE
turn-off time” can be reduced by connecting a parallel
resistor R
printed circuit board.
9. V
This circuit is responsible for short-circuit sensing. Due to
the direct measurement of V
it blocks the output buffer (through the soft turn-off circuit)
in case of short-circuit and sends a signal to the ERROR
memory on the primary side. The recognition of which
V
adjusted by R
the IGBT used. Typical values R
pF for SKHI 10 are delivered from factory (Fig. 6, curve
2). Using SKHI 10/17 the driver will be delivered with R
= 36 k and C
The V
an exponential shape starting at about 15V and
decreases to V
R
by C
V
saturation).
To avoid a false failure indication when the IGBT just
starts to conduct (V
decay time must be provided for the V
signal is internally limited at 10V, the decay time of V
must reach this level after V
occur (see Fig.6, curve 1). A t
V
(see Fig.6, curve 2). The time the IGBT come to the 10V
(represented by a „ “ in Fig. 6) depends on the IGBT
itself and R
The R
taking the V
remarks:
• R
• C
Attention!: If this function is not used, for example during
the experimental phase, the V
connected with the EMITTER output to avoid possible
fault indication and consequent gate signal blokking.
10. R
These two resistors are responsible for the switching
speed of each IGBT. As an IGBT has input capacitance
(varying during the switching time) which must be
charged and discharged, both resistors will dictate what
time must be taken to do this. The final value of
resistance is difficult to predict, because it depends on
many parameters, as follows:
• DC-link voltage
• stray inductance of the circuit
• switching frequency
• type of IGBT
CE
CEsat
CEstat
CE
), with a time constant
CE
CE
CE
level must be considered as a short circuit event, is
CE
gon
CEref
CE
monitoring
in normal operation (the IGBT is already in full
and
> 10K
< 2,7nF
). The V
, R
and C
goff
is not static but a dynamic reference which has
goff
gon
-SC (see Fig. 2) with those already on the
CEstat
to find out the best choice for R
CE
CE
used.
CEstat
CEstat
CE
and C
= 470 pF from factory.
and t
values can be found from Fig. 7 by
18-08-2006
(5V
CEsat
must be adjusted to remain above
CE
min
(see Fig. 2), and it depends of
value is still too high) some
as input values with following
V
CEstat
CEstat
(0,5 s
CE
min
CE
or a failure indication will
CE
is defined as function of
MONITORING must be
on the IGBT’s collector,
=18k
10V determinated by
© by SEMIKRON
CEref
1ms controlled
and C
. As the V
CE
and V
CE
=330
CEref
CE
CE
CE