SUP90P06-09L-E3 Siliconix / Vishay, SUP90P06-09L-E3 Datasheet

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... DS DS(on) 0.0093 @ V = − −60 −60 0.0118 @ V = −4 TO-220AB DRAIN connected to TAB Top View Ordering Information: SUP90P06-09L—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage c c Continuous Drain Current Continuous Drain Current (T = 175_C) J Pulsed Drain Current Avalanche Current a Single Pulse Avalanche Energy ...

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... SUP90P06-09L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

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... New Product 0.020 25_C 0.016 125_C 0.012 0.008 0.004 0.000 SUP90P06-09L Vishay Siliconix Transfer Characteristics 200 160 120 125_C C 40 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 V − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...

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... SUP90P06-09L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.7 1.4 1.1 0.8 0.5 −50 − − Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 New Product 100 100 125 150 ...

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... S-41203—Rev. A, 21-Jun-04 New Product 1000 100 10 1 0.1 125 150 175 0.1 Normalized Thermal Transient Impedance, Junction-to-Case −3 − Square Wave Pulse Duration (sec) SUP90P06-09L Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse − Drain-to-Source Voltage (V) DS Notes ...

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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...