SUP90P06-09L-E3 Siliconix / Vishay, SUP90P06-09L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP90P06-09L-E3
• Description: P-CHANNEL 60-V (D-S) 175C MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SUP90P06-09L-E3

• Channel Type: P
• Current, Drain: –90 A
• Fall Time: 450 ns
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 250 W
• Resistance, Thermal, Junction To Case: 0.6 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 62 °C/W
• Time, Rise: 285 ns
• Time, Turn-off Delay: 210 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 20 S
• Voltage, Breakdown, Drain To Source: –60 V
• Voltage, Diode Forward: –1.5 V
• Voltage, Drain To Source: –60 V
• Voltage, Forward, Diode: –1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Document Number: 73010
S-41203—Rev. A, 21-Jun-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
15000
12000
9000
6000
3000
200
160
120
200
160
120
80
40
80
40
0
0
0
0
0
0
C
rss
10
10
2
V
V
DS
DS
20
Output Characteristics
− Drain-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
C
5 V
Transconductance
V
I
20
D
oss
GS
30
− Drain Current (A)
Capacitance
4
= 10 thru 6 V
C
40
30
iss
T
C
2 V
6
= −55_C
50
40
60
8
50
4 V
125_C
3 V
70
25_C
New Product
10
80
60
0.020
0.016
0.012
0.008
0.004
0.000
200
160
120
80
40
20
16
12
0
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
0
V
I
V
D
DS
40
GS
= 90 A
20
On-Resistance vs. Drain Current
= 30 V
= 4.5 V
V
GS
80
Q
Transfer Characteristics
g
− Gate-to-Source Voltage (V)
I
D
− Total Gate Charge (nC)
40
25_C
120
− Drain Current (A)
Gate Charge
T
C
= 125_C
SUP90P06-09L
Vishay Siliconix
160
60
200
80
−55_C
V
GS
240
= 10 V
www.vishay.com
100
280
120
320
3