SUP90P06-09L-E3 Siliconix / Vishay, SUP90P06-09L-E3 Datasheet - Page 2

• Manufacturer Part Number: SUP90P06-09L-E3
• Description: P-CHANNEL 60-V (D-S) 175C MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SUP90P06-09L-E3

• Channel Type: P
• Current, Drain: –90 A
• Fall Time: 450 ns
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 250 W
• Resistance, Thermal, Junction To Case: 0.6 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 62 °C/W
• Time, Rise: 285 ns
• Time, Turn-off Delay: 210 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 20 S
• Voltage, Breakdown, Drain To Source: –60 V
• Voltage, Diode Forward: –1.5 V
• Voltage, Drain To Source: –60 V
• Voltage, Forward, Diode: –1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Notes:
a.
b.
c.
www.vishay.com
2
SUP90P06-09L
Vishay Siliconix
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
Parameter
g
a
c
c
c
c
c
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
I
V
RM(REC)
r
r
(BR)DSS
I
DS(
DS(on)
t
t
I
I
C
GS(th)
C
V
D(on)
C
Q
Q
d(on)
d(off)
GSS
I
DSS
DSS
Q
Q
g
R
SM
t
oss
t
I
t
SD
iss
rss
rr
fs
gs
gd
s
r
f
g
rr
g
)
New Product
C
I
V
V
V
D
= 25_C)
V
V
GS
DS
DS
GS
V
DS
DS
] −90 A, V
GS
= −30 V, V
= −10 V, I
= −60 V, V
= −60 V, V
= −10 V, I
I
V
V
F
F
V
V
V
V
V
= 0 V, V
V
V
V
DD
DD
DS
DS
GS
= −50 A, di/dt = 100 A/ms
DS
GS
I
GS
DS
DS
Test Condition
F
= −30 V, R
= −50 A, V
b
= V
= −5 V, V
= −4.5 V, I
= 0 V, V
= −10 V, I
= 0 V, I
= −60 V, V
= −15 V, I
,
f = 1.0 MHz
GEN
GS
DS
30 V, R
D
GS
GS
D
,
GS
GS
= −30 A, T
, I
= −30 A, T
= −25 V, f = 1 MHz
= −10 V, I
= −10 V, R
D
GS
D
= 0 V, T
= 0 V, T
GS
= −250 mA
D
GS
= −250 mA
D
L
L
D
GS
= "20 V
= −30 A
= −10 V
= 0.33 W
= −30 A
= −20 A
= 0 V
0.33 W
= 0 V
,
J
J
J
J
D
D
= 125_C
= 175_C
g
g
= 125_C
= 175_C
m
= −90 A
= 2.5 W
Min
−120
−60
−1
20
0.0074
0.0094
S-41203—Rev. A, 21-Jun-04
Typ
9200
−1.0
0.09
975
760
160
190
140
300
40
36
20
60
−3
Document Number: 73010
3
0.0093
0.0150
0.0190
0.0118
Max
"100
−250
−200
−1.5
−4.5
−50
240
285
210
450
−90
0.2
−3
−1
30
90
Unit
nA
mA
m
pF
nC
mC
ns
ns
ns
W
W
W
V
V
A
S
A
A
V
A