SI5513DC-T1-E3/BKN Siliconix / Vishay, SI5513DC-T1-E3/BKN Datasheet - Page 3

• Manufacturer Part Number: SI5513DC-T1-E3/BKN
• Description: MOSFET; 20V N & P CH (D-S) Complementary
• Manufacturer: Siliconix / Vishay

Specifications of SI5513DC-T1-E3/BKN

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Document Number: 71186
S-42138—Rev. F, 15-Nov-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
8
6
4
2
0
5
4
3
2
1
0
0.0
0
0
V
I
D
DS
V
= 3.1 A
0.5
GS
= 10 V
On-Resistance vs. Drain Current
V
2
= 2.5 V
DS
1
Q
Output Characteristics
g
− Drain-to-Source Voltage (V)
I
1.0
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
4
1.5
V
2
GS
= 5 thru 3 V
6
2.0
2.5 V
1.5 V
V
GS
3
2 V
8
= 4.5 V
2.5
3.0
10
4
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
−50
0.0
0
C
On-Resistance vs. Junction Temperature
C
C
rss
V
I
iss
D
−25
oss
GS
0.5
= 3.1 A
= 4.5 V
V
4
GS
T
V
0
Transfer Characteristics
J
DS
1.0
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
8
1.5
Vishay Siliconix
T
50
C
= −55_C
2.0
25_C
12
Si5513DC
75
N−CHANNEL
2.5
100
www.vishay.com
16
125_C
3.0
125
150
3.5
20
3