SI5513DC-T1-E3/BKN Siliconix / Vishay, SI5513DC-T1-E3/BKN Datasheet - Page 6

• Manufacturer Part Number: SI5513DC-T1-E3/BKN
• Description: MOSFET; 20V N & P CH (D-S) Complementary
• Manufacturer: Siliconix / Vishay

Specifications of SI5513DC-T1-E3/BKN

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

www.vishay.com
6
Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.1
−0.2
0.4
0.3
0.2
0.1
0.0
10
5
4
3
2
1
0
1
−50
0.0
0.0
V
I
D
−25
DS
Source-Drain Diode Forward Voltage
= 2.1 A
0.2
0.5
= 10 V
V
SD
Q
0
0.4
g
− Source-to-Drain Voltage (V)
T
Threshold Voltage
1.0
− Total Gate Charge (nC)
J
T
− Temperature (_C)
25
J
Gate Charge
= 150_C
0.6
1.5
50
I
D
0.8
= 250 mA
75
2.0
1.0
100
T
J
2.5
= 25_C
1.2
125
150
3.0
1.4
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
−50
0
10
0
−4
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
10
= 2.1 A
−3
= 4.5 V
1
T
0
V
J
GS
− Junction Temperature (_C)
10
Single Pulse Power
−2
− Gate-to-Source Voltage (V)
25
2
10
−1
50
Time (sec)
I
D
S-42138—Rev. F, 15-Nov-04
= 2.1 A
1
3
75
Document Number: 71186
P−CHANNEL
100
10
4
125
100
150
600
5