PIC18F1220-I/SO Microchip Technology Inc., PIC18F1220-I/SO Datasheet - Page 66
![no-image](/images/manufacturer_photos/0/4/440/microchip_technology_inc__sml.jpg)
PIC18F1220-I/SO
Manufacturer Part Number
PIC18F1220-I/SO
Description
Microcontroller; 4 KB Flash; 256 RAM; 256 EEPROM; 16 I/O; 18-Pin-SOIC
Manufacturer
Microchip Technology Inc.
Datasheet
1.PIC18F1220-ISO.pdf
(310 pages)
Specifications of PIC18F1220-I/SO
A/d Inputs
7-Channel, 10-Bit
Cpu Speed
10 MIPS
Eeprom Memory
256 Bytes
Input Output
16
Interface
USART
Memory Type
Flash
Number Of Bits
8
Package Type
18-pin SOIC
Programmable Memory
4K Bytes
Ram Size
256 Bytes
Speed
20 MHz
Timers
1-8-bit, 3-16-bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
- Current page: 66 of 310
- Download datasheet (6Mb)
PIC18F1220/1320
EXAMPLE 6-3:
DS39605C-page 64
READ_BLOCK
MODIFY_WORD
ERASE_BLOCK
WRITE_BUFFER_BACK
PROGRAM_LOOP
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
TBLRD*+
MOVF
MOVWF
DECFSZ COUNTER
GOTO
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BCF
BSF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
NOP
BSF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
WRITING TO FLASH PROGRAM MEMORY
D'64
COUNTER
BUFFER_ADDR_HIGH
FSR0H
BUFFER_ADDR_LOW
FSR0L
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
TABLAT, W
POSTINC0
READ_BLOCK
DATA_ADDR_HIGH
FSR0H
DATA_ADDR_LOW
FSR0L
NEW_DATA_LOW
POSTINC0
NEW_DATA_HIGH
INDF0
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
EECON1, CFGS
EECON1, EEPGD
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
AAh
EECON2
EECON1, WR
INTCON, GIE
8
COUNTER_HI
BUFFER_ADDR_HIGH
FSR0H
BUFFER_ADDR_LOW
FSR0L
8
COUNTER
; number of bytes in erase block
; point to buffer
; Load TBLPTR with the base
; address of the memory block
; 6 LSB = 0
; read into TABLAT, and inc
; get data
; store data and increment FSR0
; done?
; repeat
; point to buffer
; update buffer word and increment FSR0
; update buffer word
; load TBLPTR with the base
; address of the memory block
; 6 LSB = 0
; point to PROG/EEPROM memory
; point to FLASH program memory
; enable write to memory
; enable Row Erase operation
; disable interrupts
; Required sequence
; write 55H
; write AAH
; start erase (CPU stall)
; re-enable interrupts
; number of write buffer groups of 8 bytes
; point to buffer
; number of bytes in holding register
2004 Microchip Technology Inc.
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