PIC18F45J10-I/PT Microchip Technology Inc., PIC18F45J10-I/PT Datasheet - Page 75
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PIC18F45J10-I/PT
Manufacturer Part Number
PIC18F45J10-I/PT
Description
44 PIN, 32 KB FLASH, 1024 RAM
Manufacturer
Microchip Technology Inc.
Datasheet
1.PIC18F45J10-IPT.pdf
(359 pages)
Specifications of PIC18F45J10-I/PT
A/d Inputs
13-Channel, 10-Bit
Comparators
2
Cpu Speed
10 MIPS
Eeprom Memory
0 Bytes
Input Output
32
Interface
I2C/SPI/UART/USART
Memory Type
Flash
Number Of Bits
8
Package Type
44-pin TQFP
Programmable Memory
32K Bytes
Ram Size
1K Bytes
Speed
40 MHz
Timers
1-8 bit, 2-16 bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
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6.5
The minimum programming block is 32 words or
64 bytes. Word or byte programming is not supported.
Table writes are used internally to load the holding
registers needed to program the Flash memory. There
are 64 holding registers used by the table writes for
programming.
Since the Table Latch (TABLAT) is only a single byte, the
TBLWT instruction may need to be executed 64 times for
each programming operation. All of the table write
operations will essentially be short writes because only
the holding registers are written. At the end of updating
the 64 holding registers, the EECON1 register must be
written to in order to start the programming operation
with a long write.
The long write is necessary for programming the inter-
nal Flash. Instruction execution is halted while in a long
write cycle. The long write will be terminated by the
internal programming timer.
FIGURE 6-5:
6.5.1
The sequence of events for programming an internal
program memory location should be:
1.
2.
3.
4.
© 2006 Microchip Technology Inc.
TBLPTR = xxxxx0
If the section of program memory to be written to
has been programmed previously, then the
memory will need to be erased before the write
occurs (see 6.4.1 “Flash Program Memory
Erase Sequence”).
Write the 64 bytes into the holding registers with
auto-increment.
Set the EECON1 register for the write operation:
• set WREN to enable byte writes.
Disable interrupts.
Writing to Flash Program Memory
FLASH PROGRAM MEMORY WRITE
SEQUENCE
Holding Register
8
TABLE WRITES TO FLASH PROGRAM MEMORY
TBLPTR = xxxxx1
Holding Register
8
Preliminary
Program Memory
TBLPTR = xxxxx2
Write Register
TABLAT
PIC18F45J10 FAMILY
The EEPROM on-chip timer controls the write time.
The write/erase voltages are generated by an on-chip
charge pump, rated to operate over the voltage range
of the device.
5.
6.
7.
8.
9.
10. Verify the memory (table read).
An example of the required code is shown in
Example 6-3.
Holding Register
Note:
Note:
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit. This will begin the write cycle.
The CPU will stall for duration of the write (about
2 ms using internal timer).
Re-enable interrupts.
8
Unlike previous devices, the PIC18F45J10
family of devices does not reset the holding
registers after a write occurs. The holding
registers must be cleared or overwritten
before a programming sequence.
In order to maintain the endurance of the
cells, each Flash byte should not be
programmed more then twice between
erase operations. Either a bulk or row
erase of the target row is required before
attempting to modify the contents a third
time.
Before setting the WR bit, the Table
Pointer address needs to be within the
intended address range of the 64 bytes in
the holding register.
TBLPTR = xxxx3F
Holding Register
DS39682B-page 73
8
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