K4S641632D-LL60 Samsung Semiconductor, K4S641632D-LL60 Datasheet - Page 8

• Manufacturer Part Number: K4S641632D-LL60
• Manufacturer: Samsung Semiconductor
• Type: SDRAMr

Specifications of K4S641632D-LL60

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 160mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
AC CHARACTERISTICS
Notes :
Notes :
CLK cycle
time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
K4S641632D
Output rise time
Output fall time
Output rise time
Output fall time
Parameter
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
1. Rise time specification based on 0pF + 50
2. Fall time specification based on 0pF + 50
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
Parameter
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
Symbol
trh
tfh
trh
tfh
t
t
t
t
(AC operating conditions unless otherwise noted)
t
SAC
t
t
t
t
SHZ
SLZ
CC
OH
CH
SH
CL
SS
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
5.5
1.5
2
2
2
1
1
-
-
-
-
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
- 55
1000
Condition
5
5
-
-
SS
2.5
2.5
2.5
1.5
.
6
1
1
to V
-
-
to V
- 60
DD
1000
SS
5.5
5.5
-
-
, use these values to design to.
, use these values to design to.
7
3
3
3
2
1
1
-
-
- 70
1.37
1.30
Min
1000
2.8
2.0
6
6
-
-
7.5
2.5
2.5
1.5
0.8
3
1
-
-
- 75
1000
5.4
5.4
Typ
3.9
2.9
-
-
8
3
3
3
2
1
1
-
-
- 80
1000
6
6
-
-
Max
4.37
3.8
5.6
5.0
Rev. 0.3 June 2000
10
10
3
3
3
3
2
1
1
- 1H
CMOS SDRAM
1000
6
6
6
6
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Unit
10
12
3
3
3
3
2
1
1
- 1L
1000
6
7
6
7
Notes
Unit Note
1,2
1,2
3
3
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2
1
2
3
3
3
3
2