BUK7Y54-75B NXP Semiconductors, BUK7Y54-75B Datasheet - Page 7

• Manufacturer Part Number: BUK7Y54-75B
• Description: MOSFET, N CH, 75V, 21.43A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7Y54-75B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21.4A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 0.045ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

NXP Semiconductors
BUK7Y54-75B
Product data sheet
Fig 6.
Fig 8.
g
(S)
(A)
fs
I
D
50
40
30
20
10
20
15
10
0
5
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
2
V
GS
(V) = 20
10
4
6
20
All information provided in this document is subject to legal disclaimers.
8
I
003aac928
003aac931
D
V
(A)
DS
15
10
6.5
6
5.5
4.5
7
5
(V)
10
30
Rev. 04 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
I
D
200
150
100
50
40
30
20
10
0
0
of drain current; typical values.
function of gate-source voltage; typical values.
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
N-channel TrenchMOS standard level FET
4.5
10
5
2
T
j
5.5
= 175 °C
20
BUK7Y54-75B
4
6
30
6.5
T
V
j
= 25 °C
6
GS
© NXP B.V. 2010. All rights reserved.
40
(V) = 20
003aac930
003aac933
V
GS
I
D
(A)
(V)
15
10
50
8
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