BUK7Y54-75B NXP Semiconductors, BUK7Y54-75B Datasheet - Page 9

• Manufacturer Part Number: BUK7Y54-75B
• Description: MOSFET, N CH, 75V, 21.43A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7Y54-75B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21.4A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 0.045ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

NXP Semiconductors
BUK7Y54-75B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
10
8
6
4
2
0
charge; typical values.
0
V
DS
= 14 V
4
8
V
DS
(A)
I
= 60 V
S
80
60
40
20
12
0
0
All information provided in this document is subject to legal disclaimers.
Q
003aac935
G
(nC)
16
T
0.4
Rev. 04 — 7 April 2010
j
= 175 °C
0.8
Fig 15. Input, output and reverse transfer capacitances
T
(pF)
j
C
10
10
= 25 °C
10
1.2
3
2
10
as a function of drain-source voltage; typical
values.
-1
N-channel TrenchMOS standard level FET
003aac934
V
SD
(V)
1.6
1
BUK7Y54-75B
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aac932
C
C
C
iss
oss
rss
(V)
10
2
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