BUK9Y58-75B NXP Semiconductors, BUK9Y58-75B Datasheet - Page 5

• Manufacturer Part Number: BUK9Y58-75B
• Description: MOSFET, N CH, 75V, 20.73A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y58-75B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20.73A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 0.047ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.65V
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9Y58-75B
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(A)
(K/W)
I
th (j-mb)
D
10
10
10
10
10
10
10
-1
-1
-2
3
2
1
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
1
-6
Thermal characteristics
δ = 0.5
0.05
0.02
0.2
0.1
single shot
Parameter
thermal resistance
from junction to
mounting base
10
-5
Limit R
DSon
= V
Conditions
see
DS
All information provided in this document is subject to legal disclaimers.
10
/ I
-4
D
Figure 5
Rev. 04 — 7 April 2010
10
10
-3
DC
10
N-channel TrenchMOS logic level FET
-2
BUK9Y58-75B
Min
-
V
DS
10
P
-1
(V)
t
Typ
-
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aac622
003aac483
δ =
10ms
100ms
100μ s
10μ s
1ms
Max
2.53
t
T
p
t
10
1
2
Unit
K/W
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