BUK9Y58-75B NXP Semiconductors, BUK9Y58-75B Datasheet - Page 8

• Manufacturer Part Number: BUK9Y58-75B
• Description: MOSFET, N CH, 75V, 20.73A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y58-75B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20.73A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 0.047ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.65V
• Rohs Compliant: Yes

NXP Semiconductors
BUK9Y58-75B
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
a
3
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
-20
0
20
max
typ
min
60
60
100
120
All information provided in this document is subject to legal disclaimers.
140
003aad557
T
j
03nq03
T
(°C)
j
(°C)
180
180
Rev. 04 — 7 April 2010
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
DSON
(A)
I
D
10
10
10
10
10
10
100
80
60
40
-1
-2
-3
-4
-5
-6
gate-source voltage
of gate-source voltage; typical values.
0
0
N-channel TrenchMOS logic level FET
4
min
1
BUK9Y58-75B
typ
8
max
2
12
V
© NXP B.V. 2010. All rights reserved.
GS
003aad565
003aac972
V
GS
(V)
(V)
16
3
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