BFY640B-04 (P) Infineon Technologies, BFY640B-04 (P) Datasheet - Page 2

• Manufacturer Part Number: BFY640B-04 (P)
• Description: RF Germanium NPNSilicon Germanium RF Transistor
• Manufacturer: Infineon Technologies

Specifications of BFY640B-04 (P)

• Lead Free Status / Rohs Status: No
• Other names: BFY640B04PNZ

Electrical Characteristics
at T
Notes.:
1) This Test assures V(BR)CE0 > 4.0V
2)
IFAG IMM RPD D HIR
Parameter
DC Characteristics
Collector-base cutoff current
V
Collector-emitter cutoff current
V
Emitter-base cuttoff current
V
DC current gain
I
AC Characteristics
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise Figure (Z
I
I
Insertion power gain (Z
I
I
Power gain (Z
I
Power gain (Z
I
C
C
C
C
C
C
C
CB
CE
EB
CB
CE
EB
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 5 mA, V
= 5 mA, V
A
G
=25°C; unless otherwise specified
= 5 V, I
= 4.0 V, I
= 1.2 V, I
= 2 V, V
= 2 V, V
= 0.5V, V
ma

S
S
E
12
21
BE
BE
CE
CE
= 0
B
C
CE
CE
CE
CE
CB
CE
S
S
(
= vbe = 0, f = 1 MHz
= vbe = 0, f = 1 MHz
= 0.1 µA
= 0
= 3 V, f = 1.8 GHz
= 3 V, f = 6.0 GHz
= Z
= Z
S
k
= 3 V, f = 1.8 GHz
= 3 V, f = 6.0 GHz
= 3 V, f = 1.8 GHz
= 3 V, f = 6.0 GHz
= vcb = 0, f = 1 MHz
= 3 V
= Z

Sopt
Sopt
sopt)
k
, Z
, Z
2
S

= Z
L
L
1
= Z
= Z
)
L
,
= 50 )
Lopt
Lopt
1)
G
)
)
ms

S
S
12
21
C
C
C
F
|S
G
G
Symbol
I
I
I
h
CBO
CEX
EBO
FE
CB
CE
EB
ms
ma
21e
2 of 3
2)
2)
|
2
min.
-
-
-
135
-
-
-
-
-
-
-
-
-
Values
typ.
-
-
-
180
0.07
0.45
0.6
0.8
1.1
22.5
12.5
24
14
max.
10
200
5
250
-
-
-
-
-
-
-
-
-
V1, June 2010
BFY640
Unit
µA
µA
A
-
pF
pF
pF
dB
dB
dB
dB