PTFB211503FL V2 R250 Infineon Technologies, PTFB211503FL V2 R250 Datasheet - Page 3

• Manufacturer Part Number: PTFB211503FL V2 R250
• Description: RF MOSFET Power RF LDMOS FETs 150W 2110-2170 MHz
• Manufacturer: Infineon Technologies

Specifications of PTFB211503FL V2 R250

• Lead Free Status / Rohs Status: No
• Other names: FB211503FLV2R25NT

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
-20
-25
-30
-35
-40
-45
-50
-55
-60
-25
-30
-35
-40
-45
-50
-55
31
31
Two-carrier WCDMA 3GPP Drive-up
V
3GPP WCDMA, PAR = 8 dB, BW 3.84 MHz
DD
PAR = 8 dB, 10 MHz carrier spacing,
33
33
V
Single-carrier WCDMA Drive-Up
DD
= 30 V, I
= 30 V, I
35
35
ACP Up
2170 Low
2170 Up
2140 Low
2140 Up
2110 Low
2110 Up
Output Power (dBm)
37
37
Output Power (dBm)
DQ
BW 3.84 MHz
= 1.20 A, 3GPP WCDMA,
DQ
39
39
= 1.20 A, ƒ = 2170 MHz
(data taken in a production test fixture)
Efficiency
41
41
ACP Low
43
43
45
45
47
47
49
49
40
35
30
25
20
15
10
5
0
3 of 14
19
18
17
16
15
60
50
40
30
20
10
2080
31
Single-carrier WCDMA, 3GPP Broadband
V
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
DD
33
= 30 V, I
V
2100
DD
Two-carrier WCDMA 3GPP
Gain
Efficiency
35
= 30 V, I
IRL
DQ
2120
Output Power (dBm)
37
Frequency (MHz)
= 1.20 A, ƒ = 2170 MHz, 3GPP
BW 3.84MHz
DQ
39
2140
= 1.20 A, P
Efficiency
41
ACP
2160
PTFB211503EL
PTFB211503FL
43
O UT
Rev. 04, 2011-03-07
45
2180
= 40 W
Gain
47
2200
49
0
-10
-20
-30
-40
-50
0
40
30
20
10