PTFB211503FL V2 R250 Infineon Technologies, PTFB211503FL V2 R250 Datasheet - Page 5

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PTFB211503FL V2 R250

Manufacturer Part Number
PTFB211503FL V2 R250
Description
RF MOSFET Power RF LDMOS FETs 150W 2110-2170 MHz
Manufacturer
Infineon Technologies
Datasheet

Specifications of PTFB211503FL V2 R250

Lead Free Status / Rohs Status
No
Other names
FB211503FLV2R25NT
Confidential, Limited Internal Distribution
Data Sheet
Typical Performance
-20
-30
-40
-50
-60
-70
18
17
16
15
40
41
I
I
DQ
DQ
43
= 1.20 A
= 1.40 A
Intermodulation Distortion
ƒ
1
Gain vs. Output Power
Output Power, PEP (dBm)
V
= 2170 MHz, ƒ
V
DD
DD
45
45
Output Power (dBm)
vs. Output Power
CW Performance
= 30 V, ƒ = 2170 MHz
= 30 V, I
I
(cont.)
47
DQ
3rd Order
= 0.80 A
DQ
2
= 1.20 A,
= 2169 MHz
49
50
51
5th
7th
53
55
5 of 14
19
18
17
16
15
14
42
Gain & Efficiency vs. Output Power
V
DD
Gain
Efficiency
= 30 V, I
44
Power Sweep, CW
Output Power (dBm)
DQ
46
= 1.20 A, ƒ = 2170 MHz
+25ºC
+85ºC
–10ºC
48
PTFB211503EL
PTFB211503FL
Rev. 04, 2011-03-07
50
52
60
50
40
30
20
10

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