STM32L152VBT6 STMicroelectronics, STM32L152VBT6 Datasheet - Page 69

• Manufacturer Part Number: STM32L152VBT6
• Description: 16/32-BITS MICROS
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32L152VBT6

• Processor Series: STM32L152
• Core: ARM Cortex M3
• Data Bus Width: 32 bit
• Program Memory Type: Flash
• Program Memory Size: 128 KB
• Data Ram Size: 16 KB
• Interface Type: I2C, SPI, USART
• Maximum Clock Frequency: 32 MHz
• Number Of Programmable I/os: 80
• Number Of Timers: 6
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: LQFP-100
• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 83
• Eeprom Size: 4K x 8
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 3.6 V
• Data Converters: A/D 24x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Lead Free Status / Rohs Status: Details

STM32L151xx, STM32L152xx
6.3.8
Memory characteristics
The characteristics are given at T
RAM memory
Table 30.
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
Flash memory
Table 31.
1. Guaranteed by design, not tested in production.
Table 32.
1. Based on characterization not tested in production.
2. Characterization is done according to JEDEC JESD22-A117.
Symbol
Symbol
Symbol
N
t
VRM
RET
V
t
CYC
I
registers (only in Stop mode). Guaranteed by technology characteristics, not tested in production.
prog
DD
DD
(2)
(2)
Data retention mode
Operating voltage
Read / Write / Erase
Programming time for
word or half-page
Supply current during
programming / erasing
Cycling (erase / write )
Program memory
Cycling (erase / write )
EEPROM data memory
Data retention (program memory) after
10 kcycles at T
Data retention (EEPROM data memory)
after 300 kcycles at T
RAM and hardware registers
Flash memory characteristics
Flash memory endurance and data retention
Parameter
Parameter
Parameter
A
= 85 °C
(1)
A
Doc ID 17659 Rev 4
= 85 °C
A
STOP mode (or RESET)
Erase word/half page
Programmed word/half page
T
T
A
A
= -40 to 105 °C unless otherwise specified.
25 °C, V
25 °C, V
Conditions
Conditions
DD
DD
T
85 °C
T
85 °C
T
T
= 3.0 V
= 1.8 V
A
A
RET
RET
-40°C to
-40°C to
Conditions
= +85 °C
= +85 °C
1.65
1.65
Min
Min
Electrical characteristics
Min
300
30
30
10
(1)
TBD
TBD
3.28
3.28
Typ
Typ
Value
Typ Max
Max
Max
TBD
TBD
3.6
(1)
kcycles
years
Unit
69/107
Unit
Unit
mA
mA
ms
V
V