MT46H8M16LFBF-6:K Micron Technology Inc, MT46H8M16LFBF-6:K Datasheet - Page 25

• Manufacturer Part Number: MT46H8M16LFBF-6:K
• Description: IC SDRAM 128MB 166MHZ 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H8M16LFBF-6:K

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Compliant

Table 10: Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes 1–9 apply to all the parameters in this table; V
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
Parameter
Data valid output window
(DVW)
Half-clock period
Data-out High-Z
window from CK/
CK#
Data-out Low-Z window
from CK/CK#
Address and control input
hold time (fast slew rate)
Address and control input
hold time (slow slew rate)
Address and control input
setup time (fast slew rate)
Address and control input
setup time (slow slew rate)
Address and control input
pulse width
LOAD MODE REGISTER
command cycle time
DQ–DQS hold, DQS to first
DQ to go nonvalid, per ac-
cess
Data hold skew factor
ACTIVE-to-PRECHARGE
command
ACTIVE to ACTIVE/ACTIVE
to AUTO REFRESH com-
mand period
Active to read or write de-
lay
Refresh period
Average periodic refresh
interval: 64Mb, 128Mb,
and 256Mb (x32)
Average periodic refresh
interval: 256Mb, 512Mb,
1Gb, 2Gb
AUTO REFRESH command
period
CL = 3
CL = 2
Symbol
t
t
t
t
t
t
t
t
MRD
t
t
t
t
QHS
RCD
REFI
REFI
t
t
IPW
RAS
t
n/a
t
t
REF
RFC
t
QH
HP
HZ
IH
IH
IS
IS
RC
LZ
F
S
F
S
t
t
Min
t
HP -
QHS
t
t
1.0
0.9
1.1
0.9
1.1
2.3
CH,
40
55
15
80
QH -
CL
–
–
2
–
–
–
–
-5
t
Electrical Specifications – AC Operating Conditions
DQSQ
70,000
Max
15.6
5.0
6.5
0.5
7.8
64
–
–
–
–
–
–
–
–
–
–
–
–
DD
/V
DDQ
t
t
Min
t
58.2
16.2
QHS
t
HP -
t
1.0
1.0
1.2
1.0
1.2
2.5
CH,
42
80
QH -
CL
–
–
2
–
–
–
–
25
= 1.70–1.95V
-54
t
DQSQ
70,000
128Mb: x16, x32 Mobile LPDDR SDRAM
Max
15.6
5.0
6.5
0.5
7.8
64
–
–
–
–
–
–
–
–
–
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
t
Min
t
t
QHS
t
HP -
CH,
t
1.0
1.1
1.3
1.1
1.3
IS +
t
42
60
18
80
QH -
CL
IH
2
–
–
–
–
–
–
-6
t
DQSQ
70,000
Max
0.65
15.6
5.0
6.5
7.8
64
–
–
–
–
–
–
–
–
–
–
–
–
t
t
Min
t
67.5
22.5
t
QHS
t
HP -
CH,
t
1.0
1.3
1.5
1.3
1.5
IS +
t
45
80
QH -
CL
IH
2
–
–
–
–
–
–
© 2007 Micron Technology, Inc. All rights reserved.
-75
t
DQSQ
70,000
Max
0.75
15.6
6.0
6.5
7.8
64
–
–
–
–
–
–
–
–
–
–
–
–
Unit
t
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
μs
μs
Notes
19, 20
15, 21
15, 21
13, 17
17
18
19
16
22