MT46H8M16LFBF-6:K Micron Technology Inc, MT46H8M16LFBF-6:K Datasheet - Page 73

• Manufacturer Part Number: MT46H8M16LFBF-6:K
• Description: IC SDRAM 128MB 166MHZ 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H8M16LFBF-6:K

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Compliant

Figure 35: Consecutive WRITE-to-WRITE
Figure 36: Nonconsecutive WRITE-to-WRITE
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
Command
Command
Address
Address
DQS
DQS
DQ
DQ
CK#
CK#
DM
DM
CK
CK
3
3
Notes:
Notes:
WRITE
WRITE
Bank,
Col b
Bank,
Col b
T0
T0
1, 2
t
1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. D
1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. D
t
1,2
DQSS (NOM)
DQSS (NOM)
IN
IN
b (n) = data-in for column b (n).
b (n) = data-in for column b (n).
NOP
NOP
D
D
T1
T1
IN
IN
T1n
T1n
D
D
IN
IN
WRITE
Bank,
Col n
D
NOP
D
T2
T2
IN
IN
1, 2
73
T2n
T2n
D
D
IN
128Mb: x16, x32 Mobile LPDDR SDRAM
IN
WRITE
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank,
NOP
D
Col n
T3
T3
IN
1,2
Don’t Care
Don’t Care
T3n
D
IN
D
NOP
T4
T4
D
NOP
IN
IN
T4n
T4n
D
D
IN
IN
Transitioning Data
Transitioning Data
© 2007 Micron Technology, Inc. All rights reserved.
WRITE Operation
D
T5
NOP
T5
NOP
IN
T5n
D
IN