J308-E3 Vishay, J308-E3 Datasheet - Page 3

• Manufacturer Part Number: J308-E3
• Description: TRANSISTOR,JFET,N-Channel,25V,12mA, TO-92
• Manufacturer: Vishay

Specifications of J308-E3

• Power Dissipation Pd: 350mW
• Transistor Polarity: N Channel
• Current Rating: 10mA
• Continuous Drain Current Id: 60mA
• Gate-source Breakdown Voltage: -25V
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Mounting Type: Through Hole
• Gate-source Cutoff Voltage: -6.5V

Notes
a.
b.
c.
d.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS FOR U309 AND U310 (T
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
High Frequency
Common-Gate
Common-Gate
Forward Transconductance
Common-Gate
Common-Gate
Output Conductance
Common Gate Power Gain
Common-Gate Power Gain
Noise Figure
Noise Figure
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
Gain (G
Not a production test.
pg
d
d
Parameter
) measured at optimum input noise match.
b
c, d
c, d
Symbol
V
V
r
(BR)GSS
V
DS(on)
GS(off)
I
I
I
C
C
G
G
DSS
GSS
GSS
GS(F)
g
g
g
g
g
NF
NF
g
I
e
rss
og
G
os
iss
fs
f
fg
pg
n
V
V
I
D
DS
DS
= 10 mA
V
V
= 10 V
= 10 V
V
V
V
V
I
I
V
V
DS
DS
Test Conditions
V
G
G
V
DS
DS
DS
GS
DS
DG
DS
GS
= 10 mA , V
A
= −1 mA , V
= 10 V, V
= 10 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= −15 V, V
= 10 V, V
= 9 V, I
= 10 V, I
= 0 V, I
= 25_C UNLESS NOTED)
f = 1 MHz
f = 100 Hz
f = 1 kHz
D
D
D
D
D
GS
GS
D
DS
GS
= 10 mA
DS
= 1 mA
DS
= 10 mA
= 10 mA
= 10 mA
= 1 nA
= −10 V
= −10 V
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
= 0 V
= 0 V
T
= 0 V
= 0 V
A
= 125_C
−0.002
−0.001
Typ
0.16
0.55
11.5
−35
−15
110
0.7
1.9
1.5
2.7
35
14
14
13
16
4
6
a
J/SST/U308 Series
Min
−25
−1
12
10
14
10
U309
Max
−
−
250
Vishay Siliconix
0.15
0.15
2.5
3.5
−4
30
1
5
2
Limits
Min
−2.5
−25
24
10
14
10
U310
Max
−
−
www.vishay.com
250
2.5
3.5
60
0.15
0.15
−6
1
5
2
Unit
√Hz
mA
mS
nV⁄
mS
mS
nA
mA
pA
mS
dB
dB
pF
pF
W
V
V
V
NZB
3