J308-E3 Vishay, J308-E3 Datasheet - Page 7
![TRANSISTOR,JFET,N-Channel,25V,12mA, TO-92](/photos/22/17/221702/4077489_sml.jpg)
J308-E3
Manufacturer Part Number
J308-E3
Description
TRANSISTOR,JFET,N-Channel,25V,12mA, TO-92
Manufacturer
Vishay
Datasheet
1.J308-E3.pdf
(8 pages)
Specifications of J308-E3
Power Dissipation Pd
350mW
Transistor Polarity
N Channel
Current Rating
10mA
Continuous Drain Current Id
60mA
Gate-source Breakdown Voltage
-25V
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Mounting Type
Through Hole
Gate-source Cutoff Voltage
-6.5V
TYPICAL CHARACTERISTICS (T
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
0.01
0.1
10
20
16
12
1
8
4
0
10
100
Equivalent Input Noise Voltage vs. Frequency
V
T
V
I
Common−Gate
D
DS
A
DG
I
= 10 mA
D
= 25_C
= 10 V
= 10 mA
= 10 V
Reverse Admittance vs. Frequency
100
I
200
D
= 1 mA
f − Frequency (MHz)
f − Frequency (Hz)
−b
rg
−g
1 k
rg
500
10 k
+g
A
rg
= 25_C UNLESS OTHERWISE NOTED)
100 k
1000
100
150
120
0.1
10
90
60
30
1
0
0.1
100
T
V
I
Common−Gate
V
D
Output Conductance vs. Drain Current
A
DG
GS(off)
= 10 mA
= 25_C
Output Admittance vs. Frequency
= 10 V
= −3 V
J/SST/U308 Series
200
I
D
f − Frequency (MHz)
− Drain Current (mA)
25_C
Vishay Siliconix
b
1
og
T
A
= −55_C
500
g
V
f = 1 kHz
og
DS
125_C
www.vishay.com
= 10 V
1000
10
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