FDMS3602S Fairchild Semiconductor, FDMS3602S Datasheet - Page 10
![MOSFET Power 25V Dual N-Channel PowerTrench MOSFET](/photos/37/61/376185/power56_sml.jpg)
FDMS3602S
Manufacturer Part Number
FDMS3602S
Description
MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS3602S.pdf
(15 pages)
Specifications of FDMS3602S
Configuration
Dual (MOSFET & SyncFET)
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
5.6 mOhms
Forward Transconductance Gfs (max / Min)
67 S
Drain-source Breakdown Voltage
25 V
Continuous Drain Current
15 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Module Configuration
Dual
Continuous Drain Current Id
40A
Drain Source Voltage Vds
25V
On Resistance Rds(on)
0.0044ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / Rohs Status
Details
FDMS3602S Rev.C5
©2011 Fairchild Semiconductor Corporation
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3602S.
Typical Characteristics
diode reverse recovery characteristic
Figure 27. FDMS3602S SyncFET body
30
25
20
15
10
-5
5
0
0
50
100
TIME (ns)
di/dt = 300 A/
150
(continued)
μ
s
200
250
10
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
-2
-3
-4
-5
-6
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
0
5
V
DS
, REVERSE VOLTAGE (V)
10
T
T
T
J
J
J
= 100
= 125
= 25
15
o
o
o
C
C
C
20
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