FDMS3602S Fairchild Semiconductor, FDMS3602S Datasheet - Page 4

• Manufacturer Part Number: FDMS3602S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3602S

• Configuration: Dual (MOSFET & SyncFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0044ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMS3602S Rev.C5
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
40
30
20
10
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0
Figure 3. Normalized On Resistance
0
0.0
Figure 1.
1
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
= 15 A
-50
vs Junction Temperature
= 5 V
= 10 V
V
0.2
V
GS
T
DS
-25
J
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
,
,
V
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
GS
V
T
J
GS
2
T
= 25
= 3 V
0
J
= 3.5 V
V
= 150
0.4
GS
o
C
= 4 V
μ
25
s
o
V
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
= 4.5 V
50
V
0.6
GS
3
= 10 V
T
75
J
= -55
o
100 125 150
0.8
C )
o
C
μ
s
1.0
4
T
J
4
= 25°C unless otherwise noted
0.001
0.01
0.1
25
20
15
10
40
10
5
0
1
6
5
4
3
2
1
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
= 0 V
V
0.2
SD
V
T
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
Normalized On-Resistance
J
On-Resistance vs Gate to
GS
= 150
10
I
Source Voltage
= 3 V
4
D
Source to Drain Diode
,
,
V
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
T
GS
0.4
J
o
= 25
C
T
= 3.5 V
J
= 125
o
C
0.6
20
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
I
D
V
= 15 A
GS
= 4 V
0.8
T
J
30
8
T
= -55
J
www.fairchildsemi.com
= 25
V
V
1.0
GS
GS
o
C
= 10 V
= 4.5 V
o
C
μ
μ
s
s
1.2
10
40