IPG20N06S2L-35 Infineon Technologies, IPG20N06S2L-35 Datasheet - Page 2

• Manufacturer Part Number: IPG20N06S2L-35
• Description: MOSFET Power Dual N-Ch 55V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPG20N06S2L-35

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TDSON-8
• Lead Free Status / Rohs Status: Details
• Other names: IPG20N06S2L35XT

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
4)
4)
j
=25 °C, unless otherwise specified
4)
Symbol
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
DS(on)
-
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=55 V, V
=55 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
2
Conditions
cooling area
GS
, I
2)
D
D
= 1 mA
D
=27 µA
D
GS
GS
DS
=15A
=10A
=0 V,
=0 V,
=0 V
3)
min.
1.2
55
-
-
-
-
-
-
-
-
Values
0.01
typ.
100
1.6
60
35
28
1
1
-
-
IPG20N06S2L-35
max.
100
100
2.3
2.0
44
35
1
-
-
-
2009-09-07
Unit
K/W
V
µA
nA
m