IPG20N06S2L-35 Infineon Technologies, IPG20N06S2L-35 Datasheet - Page 9

• Manufacturer Part Number: IPG20N06S2L-35
• Description: MOSFET Power Dual N-Ch 55V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPG20N06S2L-35

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TDSON-8
• Lead Free Status / Rohs Status: Details
• Other names: IPG20N06S2L35XT

Rev. 1.0
Revision History
Version
Revision 1.0
Date
page 9
07.09.2009
Changes
Final Data Sheet
IPG20N06S2L-35
2009-09-07