PSMN2R6-30YLC,115 NXP Semiconductors, PSMN2R6-30YLC,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN2R6-30YLC,115
• Description: MOSFET Power N-Ch 30V 2.8mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R6-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 106 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 39 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 2435pF @ 15V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065192115

NXP Semiconductors
PSMN2R6-30YLC
Product data sheet
Fig 3.
Fig 4.
(A)
I
D
10
10
10
10
10
-1
4
3
2
1
10
Single pulse avalanche rating; avalanche current as a function of avalanche time
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
(A)
I
10
10
AL
10
10
-1
DSon
3
2
1
10
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower
All information provided in this document is subject to legal disclaimers.
-3
= V
1
DS
/ I
D
10
Rev. 01 — 2 May 2011
-2
10
-1
(1)
(2)
DC
1
003a a f 673
t
AL
(ms )
10
10
PSMN2R6-30YLC
V
DS
(V)
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
© NXP B.V. 2011. All rights reserved.
003aaf660
10
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