PSMN2R6-30YLC,115 NXP Semiconductors, PSMN2R6-30YLC,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN2R6-30YLC,115
• Description: MOSFET Power N-Ch 30V 2.8mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R6-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 106 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 39 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 2435pF @ 15V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065192115

NXP Semiconductors
PSMN2R6-30YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DS on
12
10
8
6
4
2
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
25
GS1
I
Q
D
GS
Q
2.8
GS2
50
Q
G(tot)
Q
GD
75
V
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower
GS
3.0
5.0
All information provided in this document is subject to legal disclaimers.
003a a f 664
003aaa508
(V) = 3.5
I
D
(A)
4.5
10
100
Rev. 01 — 2 May 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
a
(V)
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
10
0
PSMN2R6-30YLC
20
V
60
DS
15V
= 6V
30
24V
V
GS
= 10V
120
© NXP B.V. 2011. All rights reserved.
40
003a a f 665
003a a f 671
T
Q
j
4.5V
G
( C)
(nC)
180
50
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