PSMN3R5-80PS,127 NXP Semiconductors, PSMN3R5-80PS,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN3R5-80PS,127
• Description: MOSFET Power N-Ch 80V 3.5 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN3R5-80PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 135 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 9961pF @ 40V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065169127

NXP Semiconductors
6. Characteristics
Table 6.
PSMN3R5-80PS
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance (AC)
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
I
see
I
see
V
T
V
R
D
D
D
D
D
D
D
D
Rev. 03 — 19 April 2011
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 75 A; V
= 25 A; V
Figure 10
Figure 10
Figure
Figure 12
Figure 12
Figure 13
Figure
Figure 15
= 80 V; V
= 80 V; V
= 40 V; V
= 40 V; R
= -20 V; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220
= 10 Ω; I
DS
10; see
14; see
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
GS
GS
L
DS
GS
GS
DS
= 40 V; see
= 40 V; V
= 25 A; T
= 25 A; T
= 25 A; T
= 0.53 Ω; V
= V
= V
= V
Figure 16
D
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 75 A
= 0 V; T
GS
GS
GS
Figure 11
Figure 15
; T
; T
; T
GS
j
j
j
j
j
j
GS
j
j
j
= 10 V
= 175 °C;
= -55 °C;
= 25 °C;
= 175 °C;
= 100 °C;
= 25 °C;
j
j
j
= 25 °C
= 175 °C
= 25 °C
= -55 °C
= 25 °C
Figure
GS
= 25 °C
= 10 V;
= 10 V;
14;
PSMN3R5-80PS
[1]
Min
73
80
1
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
0.02
-
-
-
7.2
5
3
0.9
135
139
51
30
21
27
5.8
9961
847
401
41
43
109
44
© NXP B.V. 2011. All rights reserved.
-
Max
-
-
-
4.6
4
10
500
100
100
8.4
5.8
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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