PSMN3R5-80PS,127 NXP Semiconductors, PSMN3R5-80PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN3R5-80PS,127
• Description: MOSFET Power N-Ch 80V 3.5 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN3R5-80PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 135 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 9961pF @ 40V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065169127

NXP Semiconductors
Table 6.
[1]
PSMN3R5-80PS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Measured 3 mm from package.
(S)
g
R
(m Ω )
fs
250
200
150
100
DSon
50
30
25
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
5
…continued
40
10
60
15
All information provided in this document is subject to legal disclaimers.
V
003aaf602
003aaf604
GS
I
D
(A)
(V)
Conditions
I
see
I
V
80
20
S
S
Rev. 03 — 19 April 2011
GS
= 25 A; V
= 25 A; dI
Figure 17
= 0 V; V
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220
GS
S
DS
/dt = 100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 20 V
16000
12000
(pF)
8000
4000
(A)
C
I
75
D
50
25
0
0
10
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
j
0
= 25 °C;
-1
T
j
2
1
PSMN3R5-80PS
= 175 ° C
Min
-
-
-
10
4
Typ
0.8
63
121
T
V
© NXP B.V. 2011. All rights reserved.
j
V
GS
= 25 ° C
C
C
GS
003aaf606
003aaf603
iss
rss
(V)
(V)
Max
1.2
-
-
10
6
2
Unit
V
ns
nC
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