PSMN3R2-30YLC,115 NXP Semiconductors, PSMN3R2-30YLC,115 Datasheet
PSMN3R2-30YLC,115
Specifications of PSMN3R2-30YLC,115
Related parts for PSMN3R2-30YLC,115
PSMN3R2-30YLC,115 Summary of contents
Page 1
... PSMN3R2-30YLC N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
Page 2
... V DS see total gate charge see Simplified outline SOT669 (LFPAK; Power-SO8) Description plastic single-ended surface-mounted package; 4 leads Marking code 3C230L All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC Min = 4 see Figure 14; Figure see Figure 14; Figure 15 ...
Page 3
... Figure 3 003a a f779 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC Min - = 20 kΩ -20 [1] Figure 1 - Figure ° -55 -55 - 360 - = 25 ° ...
Page 4
... N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower ( (1) ( Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC 003a a f 793 ( =10 μ 100 μ 100 (V) DS © NXP B.V. 2011. All rights reserved. 003aaf780 ...
Page 5
... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN3R2-30YLC Product data sheet N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC Min Typ Max - 1.46 1.64 003aaf781 t p δ ...
Page 6
... see Figure 14; see Figure see D DS see Figure MHz °C; see Figure 0.6 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC Min Typ = 25 ° -55 ° 1.05 1.53 = 150 °C 0 ° 3. 2 29.5 = 4.5 V ...
Page 7
... Figure 18 003a a f 782 (mΩ ( 2 (V) DS Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC Min Typ Max - 12 0 003a a f 783 (V) GS © ...
Page 8
... I (A) D Fig 9. 003a a f 787 V Max (V) GS Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC 100 150 ° Transfer characteristics; drain current as a function of gate-source voltage; typical values ...
Page 9
... 100 I (A) D Fig 13. Normalized drain-source on-state resistance Q GD 003aaa508 Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC 2 V =10V GS a 1.5 1 0 factor as a function of junction temperature ( ...
Page 10
... N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower 003a a f 789 ( (V) DS Fig 17. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC 100 150 ° 0.4 0.8 voltage; typical values 003a a f 444 003a a f 792 = 25 °C ...
Page 11
... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
Page 12
... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN3R2-30YLC v.1 20110502 PSMN3R2-30YLC Product data sheet N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. ...
Page 13
... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC © NXP B.V. 2011. All rights reserved ...
Page 14
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 PSMN3R2-30YLC © NXP B.V. 2011. All rights reserved ...
Page 15
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PSMN3R2-30YLC All rights reserved. Date of release: 2 May 2011 Document identifier: PSMN3R2-30YLC ...