PSMN3R7-30YLC,115 NXP Semiconductors, PSMN3R7-30YLC,115 Datasheet - Page 3
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PSMN3R7-30YLC,115
Manufacturer Part Number
PSMN3R7-30YLC,115
Description
MOSFET Power N-Ch 30V 3.95mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN3R7-30YLC115.pdf
(15 pages)
Specifications of PSMN3R7-30YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.95 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
29 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.95 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1848pF @ 15V
Power - Max
79W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065194115
NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN3R7-30YLC
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
ESD
DS(AL)S
(A)
I
120
D
90
60
30
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
(1)
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
electrostatic discharge voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower
All information provided in this document is subject to legal disclaimers.
T
003a a f677
mb
(°C)
200
Conditions
25 °C ≤ T
25 °C ≤ T
V
V
pulsed; t
see
T
MM (JEDEC JESD22-A115)
T
pulsed; t
V
V
see
Rev. 01 — 2 May 2011
mb
mb
GS
GS
GS
sup
Figure 4
= 25 °C; see
= 25 °C
Figure 3
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
p
p
j
j
≤ 10 µs; T
≤ 10 µs; T
≤ 175 °C
≤ 175 °C; R
Fig 2.
mb
mb
j(init)
GS
P
(%)
= 25 °C; see
= 100 °C; see
der
= 50 Ω; unclamped;
Figure 2
120
= 25 °C; I
80
40
0
mb
mb
function of mounting base temperature
Normalized total power dissipation as a
0
GS
= 25 °C;
= 25 °C
= 20 kΩ
D
= 100 A;
Figure 1
50
Figure 1
PSMN3R7-30YLC
100
Min
-
-
-20
-
-
-
-
-55
-55
-
350
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
260
-
Max
30
30
20
100
74
419
79
72
419
28
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
V
A
A
mJ
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