PSMN3R7-30YLC,115 NXP Semiconductors, PSMN3R7-30YLC,115 Datasheet - Page 8
![MOSFET Power N-Ch 30V 3.95mOhms](/photos/16/8/160846/nxp_lfpak_sml.jpg)
PSMN3R7-30YLC,115
Manufacturer Part Number
PSMN3R7-30YLC,115
Description
MOSFET Power N-Ch 30V 3.95mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN3R7-30YLC115.pdf
(15 pages)
Specifications of PSMN3R7-30YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.95 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
29 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.95 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1848pF @ 15V
Power - Max
79W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065194115
NXP Semiconductors
PSMN3R7-30YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
120
(S )
D
g
80
40
fs
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
25
Min
1
50
Typ Max
2
75
N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower
V
All information provided in this document is subject to legal disclaimers.
003a a f 685
003a a f 686
GS
I
D
(V)
(A)
100
3
Rev. 01 — 2 May 2011
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS (th)
(V)
(A)
I
D
100
80
60
40
20
3
2
1
0
0
-60
function of gate-source voltage
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
0
1
T
PSMN3R7-30YLC
j
= 150 °C
I
D
=5mA
60
2
1mA
T
j
120
= 25 °C
3
© NXP B.V. 2011. All rights reserved.
003a a f 688
003a a f 684
V
T
GS
j
(°C)
(V)
180
4
8 of 15