PSMN5R0-100PS,127 NXP Semiconductors, PSMN5R0-100PS,127 Datasheet - Page 9
![MOSFET Power N-Ch 100V 5 mOhms](/photos/16/7/160729/to220ab_sml.jpg)
PSMN5R0-100PS,127
Manufacturer Part Number
PSMN5R0-100PS,127
Description
MOSFET Power N-Ch 100V 5 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN5R0-100PS127.pdf
(14 pages)
Specifications of PSMN5R0-100PS,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
110 A
Power Dissipation
338 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
9900pF @ 50V
Power - Max
338W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065172127
NXP Semiconductors
PSMN5R0-100PS
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
100
S
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
T
0.3
j
Rev. 2 — 15 April 2011
= 175 ° C
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
0.6
T
j
= 25 ° C
0.9
003aaf731
V
SD
(V)
1.2
PSMN5R0-100PS
© NXP B.V. 2011. All rights reserved.
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