IPG20N04S4-09 Infineon Technologies, IPG20N04S4-09 Datasheet

MOSFET Power N-Channel 40V MOSFET

IPG20N04S4-09

Manufacturer Part Number

IPG20N04S4-09

Description

MOSFET Power N-Channel 40V MOSFET

Manufacturer

Infineon Technologies

Datasheets

1.IPG20N04S4-09.pdf (9 pages)

2.IPG20N04S4-09.pdf (9 pages)

Specifications of IPG20N04S4-09

Configuration

Dual

Transistor Polarity

Dual N-Channel

Resistance Drain-source Rds (on)

8.6 mOhms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

20 A

Power Dissipation

54 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TDSON-8

Lead Free Status / Rohs Status

Details

Other names

IPG20N04S409XT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IPG20N04S4-09

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IPG20N04S4-09

0

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Rev. 1.0

OptiMOS™-T2 Power-Transistor

Features

• Dual N-channel Normal Level - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

Parameter

Continuous drain current

one channel active

Pulsed drain current

one channel active

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

Power dissipation

one channel active

Operating and storage temperature

Type

IPG20N04S4-09

2)

Package

PG-TDSON-8-4

j

=25 °C, unless otherwise specified

2, 4)

4)

Symbol

I

I

E

I

V

P

T

D

D,pulse

AS

j

AS

GS

tot

, T

Marking

4N0409

stg

T

T

V

-

I

-

-

T

-

D

C

C

C

GS

=10A

page 1

=25 °C, V

=100 °C,

=25 °C

=10 V

Conditions

2)

GS

Product Summary

V

R

I

D

=10 V

DS

DS(on),max

1)

4)

-55 ... +175

Value

145

±20

20

20

80

15

54

PG-TDSON-8-4

IPG20N04S4-09

8.6

40

20

2010-10-08

Unit

A

mJ

A

V

W

°C

V

mW

A

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